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Disorder beneath epitaxial graphene on SiC(0001): An x-ray absorption study
http://hdl.handle.net/2237/20773
http://hdl.handle.net/2237/20773c50b5861-fcdb-4614-a345-68a9b9531092
名前 / ファイル | ライセンス | アクション |
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PhysRevB_78_201404.pdf (318.7 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2014-11-14 | |||||
タイトル | ||||||
タイトル | Disorder beneath epitaxial graphene on SiC(0001): An x-ray absorption study | |||||
言語 | en | |||||
著者 |
Gao, Xingyu
× Gao, Xingyu× Chen, Shi× Liu, Tao× Chen, Wei× Wee, A. T. S.× Nomoto, T.× Yagi, S.× Soda, Kazuo× Yuhara, Junji |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | ©2008 American Physical Society | |||||
抄録 | ||||||
内容記述 | The evolution of silicon carbide (0001) surface reconstruction upon annealing has been studied by Si K-edge near-edge x-ray-absorption fine structure (NEXAFS). With the increase in annealing temperature, the fluorescence yield of Si K-edge NEXAFS clearly indicates an increase in disorder of Si atoms in the much deeper interior beneath the surface due to out diffusion of Si atoms to the surface forming increased Si vacancies. The concentration of Si vacancies beneath the epitaxial graphene formed by high-temperature annealing of SiC is estimated to be as high as 15% to a depth of several micrometers. As acceptors in SiC, the high concentration of Si vacancies could have a significant impact on the electronic properties of epitaxial graphene by charge-transfer doping from the substrate and the introduction of interface states. | |||||
言語 | en | |||||
内容記述タイプ | Abstract | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | American Physical Society | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
出版タイプ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1103/PhysRevB.78.201404 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 1098-0121 | |||||
書誌情報 |
en : Physical Review B 巻 78, p. 201404(R)-201404(R), 発行日 2008-11 |
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著者版フラグ | ||||||
値 | publisher | |||||
URI | ||||||
識別子 | http://dx.doi.org/10.1103/PhysRevB.78.201404 | |||||
識別子タイプ | DOI | |||||
URI | ||||||
識別子 | http://hdl.handle.net/2237/20773 | |||||
識別子タイプ | HDL |