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Lattice bow in thick, homoepitaxial GaN layers for vertical power devices
http://hdl.handle.net/2237/00032639
http://hdl.handle.net/2237/00032639ab75eaa0-b072-487d-b552-3b4a37689318
名前 / ファイル | ライセンス | アクション |
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Manuscript_final (937.3 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2020-09-16 | |||||
タイトル | ||||||
タイトル | Lattice bow in thick, homoepitaxial GaN layers for vertical power devices | |||||
言語 | en | |||||
著者 |
Liu, Qiang
× Liu, Qiang× Fujimoto, Naoki× Shen, Jian× Nitta, Shugo× Tanaka, Atsushi× Honda, Yoshio× Sitar, Zlatko× Boćkowski, Michał× Kumagai, Yoshinao× Amano, Hiroshi |
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アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
権利 | ||||||
言語 | en | |||||
権利情報 | © 2020. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | attice bow | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | hick GaN homoepitaxy | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | itrides | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | emiconducting III-V materials | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | ertical power devices | |||||
抄録 | ||||||
内容記述 | Lattice bow generated by 40 µm thick HVPE homoepitaxial layers on commercial free-standing, ammonothermal and HVPE GaN wafers was studied. While a change in lattice bow was measured for all wafers, the additional bow on the ammonothermal GaN wafers was minimal. The main driving force for the observed increase in the lattice bow for HVPE wafers was related to stress in the films generated by the elongation of dislocations via climb and generation of new dislocations at the homoepitaxial interface. Lattice bow is a crucial wafer parameter as it determines the variation of the offcut across the surface. If an offcut variation of 0.1° is allowed for desired control surface morphology, composition of alloys, and uniformity of doping on this surface, the measured bow on the two HVPE GaN wafers and one ammonothermal GaN wafer limits their uniformity-diameter to ~0.5″, 1″ and >4″, respectively. | |||||
言語 | en | |||||
内容記述タイプ | Abstract | |||||
内容記述 | ||||||
内容記述 | ファイル公開:2022-06-01 | |||||
言語 | ja | |||||
内容記述タイプ | Other | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | Elsevier | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプresource | http://purl.org/coar/resource_type/c_6501 | |||||
タイプ | journal article | |||||
出版タイプ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1016/j.jcrysgro.2020.125643 | |||||
ISSN(print) | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 0022-0248 | |||||
書誌情報 |
en : Journal of Crystal Growth 巻 539, p. 125643, 発行日 2020-06-01 |
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著者版フラグ | ||||||
値 | author |