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https://nagoya.repo.nii.ac.jp/oai
oai:nagoya.repo.nii.ac.jp:00005377
2023-01-16T03:50:03Z
320:321:322
Self-organized propagation of dislocations in GaN films during epitaxial lateral overgrowth
Sakai, Akira
Sunakawa, Haruo
Kimura, Akitaka
Usui, Akira
open access
Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Dislocation propagation and defect evolution in GaN films formed by epitaxial lateral overgrowth (ELO) are examined by transmission electron microscopy. A novel effect that induces self-organized propagation of preexisting dislocations in ELO films is evaluated. This propagation forms dislocations into bundle structures along the stripes of masks used for ELO. The dislocation bundling gives rise to crystallographic tilting in the overgrown region on the mask and leads to a total reduction of threading dislocation density in the film.
American Institute of Physics
2000-01-24
eng
journal article
VoR
http://hdl.handle.net/2237/6982
https://nagoya.repo.nii.ac.jp/records/5377
https://doi.org/10.1063/1.125781
0003-6951
Applied Physics Letters
76
4
442
444
https://nagoya.repo.nii.ac.jp/record/5377/files/ApplPhysLett_76_442.pdf
application/pdf
208.0 kB
2018-02-19