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https://nagoya.repo.nii.ac.jp/oai
oai:nagoya.repo.nii.ac.jp:00005387
2023-01-16T03:50:04Z
320:321:322
Sub-5 nm gold dot formation using retarding-field single ion deposition
Hori, M.
Woodham, RG.
Ahmed, H.
open access
Copyright (1998) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Gold dots of 2.5 nm mean diameter and 0.8 nm standard deviation have been fabricated successfully on chromium oxide (CrO_x) thin films. The CrO_x thin films were deposited on Si substrates by sputtering and gold dots were subsequently deposited by a retarding-field single ion deposition (RSID) technique. The formation of gold dots has been investigated systematically with landing energies from 100 to 900 eV and doses from 10 to 40 C/m^2. The dot diameter and density could be controlled by varying the landing energy and dose of gold ions arriving on the surface. The formation of single electron devices, quantum dots, nanopillars, and other nanoscale device structures is proposed using the RSID technique.
American Institute of Physics
1998-11-30
eng
journal article
VoR
http://hdl.handle.net/2237/6992
https://nagoya.repo.nii.ac.jp/records/5387
https://doi.org/10.1063/1.122725
0003-6951
Applied Physics Letters
73
22
3223
3225
https://nagoya.repo.nii.ac.jp/record/5387/files/ApplPhysLett_73_3223.pdf
application/pdf
181.5 kB
2018-02-19