2024-03-29T12:07:59Z
https://nagoya.repo.nii.ac.jp/oai
oai:nagoya.repo.nii.ac.jp:00005433
2023-01-16T03:50:00Z
320:321:322
Characteristics of C_3 radicals in high-density C_4F_8 plasmas studied by laser-induced fluorescence spectroscopy
Takizawa, K.
Sasaki, K.
Kadota, K.
open access
Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Spatial and temporal variations of C_3 density in high-density octafluorocyclobutane (c-C_4F_8) plasmas were examined using laser-induced fluorescence spectroscopy. The C_3 density varied slowly for a long time after the initiation of discharge, suggesting the importance of surface chemistry for the formation of C_3 . Hollow-shaped spatial distributions (the C_3 density adjacent to the chamber wall was higher than that in the plasma column) were observed in the C_3 density. This result indicates that C_3 radicals are produced from fluorocarbon film on the chamber wall and are lost in the plasma column due to electron impact processes. The surface production of C_3 was also observed in the afterglow for 1 ms after the termination of rf power. The decay time constant of the C_3 density in the late (>1 ms) afterglow, where the surface production of C_3 stopped, was almost independent of discharge parameters, suggesting that the loss of C_3 due to gas-phase reactions is negligible.
American Institute of Physics
2000-12-01
eng
journal article
VoR
http://hdl.handle.net/2237/7037
https://nagoya.repo.nii.ac.jp/records/5433
https://doi.org/10.1063/1.1321029
0021-8979
Journal of Applied Physics
88
11
6201
6206
https://nagoya.repo.nii.ac.jp/record/5433/files/JApplPhys_88_6201.pdf
application/pdf
260.7 kB
2018-02-19