2024-03-29T08:21:55Z
https://nagoya.repo.nii.ac.jp/oai
oai:nagoya.repo.nii.ac.jp:00005447
2023-01-16T03:50:02Z
336:695:696
Highly polarized electrons from GaAs–GaAsP and InGaAs–AlGaAs strained-layer superlattice photocathodes
Nishitani, T.
Nakanishi, T.
Yamamoto, M.
Okumi, S.
Furuta, F.
Miyamoto, M.
Kuwahara, M.
Yamamoto, N.
Naniwa, K.
Watanabe, O.
Takeda, Y.
Kobayakawa, H.
Takashima, Y.
Horinaka, H.
Matsuyama, T.
Togawa, K.
Saka, T.
Tawada, M.
Omori, T.
Kurihara, Y.
Yoshioka, M.
Kato, K.
Baba, T.
open access
Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
GaAs–GaAsP and InGaAs–AlGaAs strained-layer superlattice photocathodes are presented as emission sources for highly polarized electron beams. The GaAs–GaAsP cathode achieved a maximum polarization of 92(±6)% with a quantum efficiency of 0.5%, while the InGaAs–AlGaAs cathode provides a higher quantum efficiency (0.7%) but a lower polarization [77(±5)%]. Criteria for achieving high polarization using superlattice photocathodes are discussed based on experimental spin-resolved quantum efficiency spectra.
American Institute of Physics
2005-05-01
eng
journal article
VoR
http://hdl.handle.net/2237/7051
https://nagoya.repo.nii.ac.jp/records/5447
https://doi.org/10.1063/1.1886888
0021-8979
Journal of Applied Physics
97
9
094907
094907
https://nagoya.repo.nii.ac.jp/record/5447/files/JApplPhys_97_094907.pdf
application/pdf
189.5 kB
2018-02-19