2024-03-29T08:49:47Z
https://nagoya.repo.nii.ac.jp/oai
oai:nagoya.repo.nii.ac.jp:00007101
2023-01-16T03:52:35Z
320:321:322
Role of atomic nitrogen during GaN growth by plasma-assisted molecular beam epitaxy revealed by appearance mass spectrometry
Osaka, J.
Kumar, Senthil M.
Toyoda, H.
Ishijima, T.
Sugai, H.
Mizutani, T.
open access
Copyright (2007) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
To identify the species which contribute to GaN growth, the authors investigated the discharge parameter (0.3–4.8 SCCM (SCCM denotes cubic centimeter per minute at STP), 150–400 W) dependences of the atomic N flux by appearance mass spectrometry and of the incorporated nitrogen atoms into GaN layers grown by plasma-assisted molecular beam epitaxy (PAMBE) using the rf-plasma source. Ion fluxes were also evaluated by ion current measurements. A good correlation between the supplied atomic N flux and the incorporated nitrogen flux was obtained under a wide range of plasma conditions. It was clarified that the atomic N plays a dominant role in the growth of GaN by PAMBE.
American Institute of Physics
2007-04-23
eng
journal article
VoR
http://hdl.handle.net/2237/8775
https://nagoya.repo.nii.ac.jp/records/7101
https://doi.org/10.1063/1.2734390
0003-6951
APPLIED PHYSICS LETTERS
90
17
172114
172114
https://nagoya.repo.nii.ac.jp/record/7101/files/AppPhysLett_90-172114.pdf
application/pdf
74.6 kB
2018-02-19