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Reduction of phonon resonant terahertz wave absorption in photoconductive switches using epitaxial layer transfer Kasai, S Katagiri, T Takayanagi, J Kawase, K Ouchi, T open access Copyright (2009) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior per　mission of the author and the American Institute of Physics. epitaxial layers gallium arsenide III-V semiconductors phonons photoconducting switches terahertz wave spectra A broadband terahertz time-domain spectroscopy (TDS) system for frequencies of up to 15 THz, including the phonon resonance frequency range, has been developed using a transferred thin-film photoconductive switch (PCS) detector. The thin-film PCSs, based on low-temperature-grown GaAs, were fabricated using epitaxial layer transfer onto high-resistivity Si substrates. We observed a reduction of phonon resonant absorption, including between 7 and 10 THz, in a forward radiation configuration. Numerically calculated absorption spectra show good agreement with our experimental results. This technique will provide compact, broadband TDS systems. American Institite of Physics 2009-03-18 eng journal article VoR http://hdl.handle.net/2237/12632 https://nagoya.repo.nii.ac.jp/records/10789 https://doi.org/10.1063/1.3103278 0003-6951 APPLIED PHYSICS LETTERS 94 11 113505 113505 https://nagoya.repo.nii.ac.jp/record/10789/files/ApplPhysLett_94_113505.pdf application/pdf 109.3 kB 2018-02-20