2024-03-28T18:26:51Z
https://nagoya.repo.nii.ac.jp/oai
oai:nagoya.repo.nii.ac.jp:00012276
2023-01-16T03:59:02Z
320:321:322
Si clusters on reconstructed SiC (0001) revealed by surface extended x-ray absorption fine structure
Gao, Xingyu
Chen, Shi
Liu, Tao
Chen, Wei
Wee, A. T. S.
Nomoto, T.
Yagi, S.
Soda, Kazuo
Yuhara, Junji
open access
Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The evolution of silicon carbide (0001) surface reconstruction upon annealing has been studied by Si K edge extended x-ray absorption fine structure (EXAFS). Using Si KVV Auger electron yield at different emission angles with different surface sensitivities, EXAFS reveals conclusively that Si–Si bonds exist on the surface for all reconstructions. The existence of Si clusters on the 6 square root of 3 × 6 square root of 3R30° surface was also confirmed by x-ray photoemission spectroscopy. This finding gives us a better understanding of epitaxial graphene formation on SiC.
American Institute of Physics
2009-10
eng
journal article
VoR
http://hdl.handle.net/2237/14156
https://nagoya.repo.nii.ac.jp/records/12276
https://doi.org/10.1063/1.3242005
0003-6951
APPLIED PHYSICS LETTERS
95
14
144102
144102
https://nagoya.repo.nii.ac.jp/record/12276/files/APPLIED_PHYSICS_LETTERS_95_14_144102.pdf
application/pdf
151.9 kB
2018-02-20