2024-03-28T22:32:54Z
https://nagoya.repo.nii.ac.jp/oai
oai:nagoya.repo.nii.ac.jp:00013110
2023-01-16T04:00:03Z
320:321:322
Low-Frequency Noise Characteristics of AlGaAs/InGaAs Pseudomorphic HEMTs
MIZUTANI, Takashi
YAMAMOTO, Makoto
KISHIMOTO, Shigeru
MAEZAWA, Koichi
open access
Copyright (C) 2001 IEICE
low-frequency noise
HEMT
Arrhenius plot
DX center
Lorentz noise
The low-frequency noise of InGaAs pseudomorphic HEMTs fabricated on GaAs substrate was studied. The dependence of the noise spectral density on the gate voltage indicates that the channel of the device dominates the low-frequency noise. Generation-recombination (G-R) noise was observed in the form of bulges superimposed on a background of 1/f. The activation energyof the G-R noise was 0.32-0.39 eV which is close to that of the DX center, suggesting that the origin of the G-R noise is the DX center in the AlGaAs barrier layer. Little bulge was observed in the gate current noise of the HEMTs with large InAs mole fractions of 0.4 and 0.5. Generation of the traps with different time constant can explain this behavior.
Institute of Electronics, Information and Communication Engineers
2001-10-01
eng
journal article
VoR
http://hdl.handle.net/2237/15005
https://nagoya.repo.nii.ac.jp/records/13110
http://www.ieice.org/jpn/trans_online/index.html
0916-8516
IEICE transactions on electronics
E84-C
10
1318
1322
https://nagoya.repo.nii.ac.jp/record/13110/files/481.pdf
application/pdf
389.5 kB
2018-02-20