2024-03-28T15:27:18Z
https://nagoya.repo.nii.ac.jp/oai
oai:nagoya.repo.nii.ac.jp:00018541
2023-01-16T04:07:19Z
320:321:322
Size of orbital-ordering domain controlled by the itinerancy of the 3d electrons in a manganite thin film
Wakabayashi, Y.
Sagayama, H.
Arima, T.
Nakamura, M.
Ogimoto, Y.
Kubo, Y.
Miyano, K.
Sawa, H.
open access
© 2009 The American Physical Society
An electronic effect on a macroscopic domain structure is found in a strongly correlated half-doped manganite film Nd0.5Sr0.5MnO3 grown on a (011) surface of SrTiO3. The sample has a high-temperature (HT) phase free from distortion above 180 K and two low-temperature (LT) phases with a large shear-mode strain and a concomitant twin structure. One LT phase has a large itinerancy (A type), and the other has a small itinerancy (CE type), while the lattice distortions they cause are almost equal. Our x-ray diffraction measurement shows that the domain size of the LT phase made by the HT-CE transition is much smaller than that by the HT-A transition, indicating that the difference in domain size is caused by the difference in orbital arrangement and resulting itinerancy of the LT phases.
American Physical Society
2009-06
eng
journal article
VoR
http://hdl.handle.net/2237/20627
https://nagoya.repo.nii.ac.jp/records/18541
https://doi.org/10.1103/PhysRevB.79.220403
1098-0121
Physical Review B
79
220403(R)
220403(R)
https://nagoya.repo.nii.ac.jp/record/18541/files/PhysRevB_79_220403.pdf
application/pdf
169.2 kB
2018-02-21