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oai:nagoya.repo.nii.ac.jp:00023089 2023-01-16T04:12:47Z 320:321:322

Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects Ike, Shinichi Simoen, Eddy Shimura, Yosuke Hikavyy, Andriy Vandervorst, Wilfried Loo, Roger Takeuchi, Wakana Nakatsuka, Osamu Zaima, Shigeaki open access © 2016 The Japan Society of Applied Physics We have investigated the structural and electrical properties of n-type doped Si1− x Ge x epitaxial layers (x = 24–26%) grown by chemical vapor deposition with conventional [SiH2Cl2 (DCS)/GeH4] and high-order (Si2H6/Ge2H6) precursor combinations. X-ray diffraction, atomic force microscopy, and deep-level transient spectroscopy (DLTS) measurements were performed for characterization. The crystalline properties and surface morphology of the Si1− x Ge x layer with Si2H6/Ge2H6 grown at temperatures as low as 550 °C show good structural quality similar to that with DCS/GeH4 grown at 615 °C. On the other hand, in terms of electrical properties, the DLTS measurement reveals the existence of vacancy-related complexes in the as-grown layer with Si2H6/Ge2H6. We found that post-deposition annealing at 200 °C for the Si1− x Ge x epitaxial layer is effective for annihilating vacancy-related defects with densities down to as low as that of conventional precursors. IOP publishing 2016-04 eng journal article AM http://hdl.handle.net/2237/25279 https://nagoya.repo.nii.ac.jp/records/23089 https://doi.org/10.7567/JJAP.55.04EJ11 0021-4922 Japanese Journal of Applied Physics 55 4S 04EJ11 04EJ11 https://nagoya.repo.nii.ac.jp/record/23089/files/JJAP_Ike_Merged_SS15181.pdf application/pdf 969.4 kB 2017-04-01