2024-03-29T15:26:48Z
https://nagoya.repo.nii.ac.jp/oai
oai:nagoya.repo.nii.ac.jp:00023090
2023-01-16T04:12:48Z
320:321:322
Effect of in situ Sb doping on crystalline and electrical characteristics of n-type Ge1− x Sn x epitaxial layer
Jeon, Jihee
Asano, Takanori
Shimura, Yosuke
Takeuchi, Wakana
Kurosawa, Masashi
Sakashita, Mitsuo
Nakatsuka, Osamu
Zaima, Shigeaki
open access
© 2016 The Japan Society of Applied Physics
We examined the molecular beam epitaxy of Ge1− x Sn x with in situ Sb doping on Ge substrates. The effects of Sb doping on the crystalline and electrical characteristics of Ge1− x Sn x epitaxial layer were investigated in detail. We found that Sb doping with a concentration of 1020 cm−3 remarkably improves the crystallinity, and surface uniformity of the Ge1− x Sn x epitaxial layer by changing the growth mode by the surfactant effect of Sb atoms. Low-temperature Ge1− x Sn x growth with in situ Sb doping realizes a very high electron concentration of 1020 cm−3, which is above the thermal equilibrium solid solubility, as a result of suppressing Sb segregation and precipitation.
IOP publishing
2016-04
eng
journal article
AM
http://hdl.handle.net/2237/25280
https://nagoya.repo.nii.ac.jp/records/23090
https://doi.org/10.7567/JJAP.55.04EB13
0021-4922
Japanese Journal of Applied Physics
55
4S
04EB13
04EB13
https://nagoya.repo.nii.ac.jp/record/23090/files/Jeon_JJAP_Merged.pdf
application/pdf
1.6 MB
2017-04-01