2024-03-28T10:52:25Z
https://nagoya.repo.nii.ac.jp/oai
oai:nagoya.repo.nii.ac.jp:00026315
2023-01-16T04:16:47Z
673:674:675
Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching
Matsumoto, Koji
Ono, Toshiaki
Honda, Yoshio
Yamamoto, Tetsuya
Usami, Shigeyoshi
Kushimoto, Maki
Murakami, Satoshi
Amano, Hiroshi
open access
This is the peer reviewed version of the following article: [Matsumoto, K. , Ono, T. , Honda, Y. , Yamamoto, T. , Usami, S. , Kushimoto, M. , Murakami, S. and Amano, H. (2018), Reduction of Dislocations in GaN on Silicon Substrate Using In Situ Etching. Phys. Status Solidi B, 255: 1700387. doi:10.1002/pssb.201700387], which has been published in final form at [https://doi.org/10.1002/pssb.201700387]. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.
GaN-on-Si
threading dislocation
in-situ etching
nano-pit
A gallium nitride (GaN) epitaxial layer with a low density of threading dislocations is successfully grown on a silicon substrate by using in situ gas etching. Silicon nitride (SiNx) film is used as a mask, and ammonia is intermittently supplied in hydrogen ambient during the etching. After etching, high‐density deep pits appeared on the surface of a GaN template layer and corresponded to the threading dislocations in the layer. In this novel method, before growing an additional GaN layer on the template GaN layer, a second SiNx layer is deposited after the etching process, and this layer prevents GaN nuclei from growing on the upper side‐walls of the pits. By using this method, the density of threading dislocations of the GaN surface is reduced to 6.7 × 10^7 cm^−2. This method is cost effective, completing all the necessary processes in one growth run without taking samples out from a metalorganic chemical vapor deposition (MOCVD) reactor.
ファイル公開:2019-05-14
Wiley
2018-05-14
eng
journal article
AM
http://hdl.handle.net/2237/00028518
https://nagoya.repo.nii.ac.jp/records/26315
https://doi.org/10.1002/pssb.201700387
0370-1972
physica status solidi (b)
255
5
1700387
https://nagoya.repo.nii.ac.jp/record/26315/files/Matsumoto_PSSB_255_5_1700387.pdf
application/pdf
913.6 kB
2019-05-14