2024-03-19T05:26:07Z
https://nagoya.repo.nii.ac.jp/oai
oai:nagoya.repo.nii.ac.jp:00028684
2023-01-16T04:20:55Z
320:321:322
Electrical current switching of the noncollinear antiferromagnet Mn3GaN
Hajiri, T.
Ishino, S.
Matsuura, K.
Asano, H.
open access
Copyright 2016 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in (Applied Physics Letters. v.115, n.5, 2019, p.052403) and may be found at (http://dx.doi.org/10.1063/1.5109317).
We report electrical current switching of noncollinear antiferromagnetic (AFM) Mn3GaN/Pt bilayers at room temperature. The Hall resistance of these bilayers can be manipulated by applying a pulse current of 1.5 × 10^6 A/cm^2, whereas no significant change is observed up to ∼10^8 A/cm^2 in Mn3GaN single films, indicating that the Pt layer plays an important role. In comparison with ferrimagnetic Mn3GaN/Pt bilayers, a lower electrical current switching of noncollinear AFM Mn3GaN is demonstrated, with a critical current density two orders of magnitude smaller. Our results highlight that a combination of a noncollinear AFM antiperovskite nitride and a spin-torque technique is a good platform for AFM spintronics.
Published Online: 01 August 2019. ファイル公開:2020/08/01
AIP Publishing
2019-07
eng
journal article
VoR
http://hdl.handle.net/2237/00030872
https://nagoya.repo.nii.ac.jp/records/28684
https://doi.org/10.1063/1.5109317
0003-6951
Applied Physics Letters
115
5
052403
https://nagoya.repo.nii.ac.jp/record/28684/files/1_5109317.pdf
application/pdf
1.6 MB
2020-08-01