2024-03-29T14:19:42Z
https://nagoya.repo.nii.ac.jp/oai
oai:nagoya.repo.nii.ac.jp:00028793
2023-01-16T04:21:50Z
336:695:696
Ionic liquid thin layer-induced memory effects in organic field-effect transistors
Eguchi, Keitaro
Matsushita, Michio M.
Awaga, Kunio
open access
We examined the morphologies and structures of pentacene and C60 thin films grown on thin layers of an ionic liquid, N,N-diethyl-N-methyl-N-(2-methoxyethyl)ammonium bis(trifluoromethanesulfonyl)imide (DEME-TFSI), and found that the characteristics of the films depended significantly on the thickness of DEME-TFSI. In addition, we fabricated organic field-effect transistors (OFETs) of pentacene and C60 in which a thin layer of DEME-TFSI was inserted between the organic semiconductor (pentacene or C60) and the gate insulating layer, and measured their performance in situ. We found that 1.5–2 ML (ML: monolayer) DEME-TFSI produced a large hysteresis loop in the transfer characteristics in these OFETs, but 5 ML DEME-TFSI resulted in the formation of normally-on states with far smaller memory effects. The curvatures of the hysteresis loops were caused by the formation of trap states induced by the DEME-TFSI layers. This novel technique provides a simple tool for creating hysteresis behavior and could potentially be applied to transistor memory devices.
ファイル公開:2020/09/21
Royal Society of Chemistry
2019-09-21
eng
journal article
AM
http://hdl.handle.net/2237/00030980
https://nagoya.repo.nii.ac.jp/records/28793
https://doi.org/10.1039/C9CP01647C
1463-9076
Physical Chemistry Chemical Physics
21
35
18823
18829
https://nagoya.repo.nii.ac.jp/record/28793/files/Awaga_PCCP.docx.pdf
application/pdf
1.6 MB
2020-09-21