2024-03-29T01:31:55Z
https://nagoya.repo.nii.ac.jp/oai
oai:nagoya.repo.nii.ac.jp:00029142
2023-01-16T04:22:18Z
320:321:322
Morphology and Electronic Structure of Sn-Intercalated TiS2(0001) Layers
Yuhara, Junji
Isobe, Naoki
Nishino, Kazuki
Fujii, Yuya
Chan, Lap Hong
Araidai, Masaaki
Nakatake, Masashi
open access
“This document is the Accepted Manuscript version of a Published Work that appeared in final form in [The Journal of Physical Chemistry C], copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see [https://pubs.acs.org/articlesonrequest/AOR-BpXzPrk5ezGzI6hUj85I].”
Band structure
Surface analysis
Layers
Electrical energy
Scanning tunneling microscopy
The surface morphology and electronic structure of layered semiconductor 1-trigonal phase titanium disulfide, i.e., 1T-TiS2(0001), with Sn intercalation, have been studied by scanning tunneling microscopy (STM), low-energy electron diffraction, synchrotron radiation photoemission spectroscopy, and first-principles calculations based on density functional theory (DFT). From the STM images, we show that Sn atoms are intercalated into TiS2 layers. The electronic structure exhibits electron Fermi pockets around M points and characteristic band dispersions around the M and K points after Sn intercalation. The DFT calculations reveal the geometrical site of intercalated Sn atom, which is surrounded by six sulfur atoms with D3d symmetry. The calculated electronic band structures are in good agreement with the experimental band structure.
ファイル公開:2020-09-12
ACS Publications
2019-09-12
eng
journal article
AM
http://hdl.handle.net/2237/00031329
https://nagoya.repo.nii.ac.jp/records/29142
https://doi.org/10.1021/acs.jpcc.9b05492
1932-7447
The Journal of Physical Chemistry C
123
36
22293
22298
https://nagoya.repo.nii.ac.jp/record/29142/files/manuscript_Sn_on_TiS2_JPC_C.pdf
application/pdf
1.6 MB
2020-09-12