2024-03-29T02:21:18Z
https://nagoya.repo.nii.ac.jp/oai
oai:nagoya.repo.nii.ac.jp:00030458
2023-01-16T04:23:56Z
673:674:675
Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO
Ohnishi, Kazuki
Amano, Yuki
Fujimoto, Naoki
Nitta, Shugo
Honda, Yoshio
Amano, Hiroshi
open access
This is an author-created, un-copyedited version of an article published in {Applied Physics Express}. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at {https://doi.org/10.35848/1882-0786/ab9166}. “This Accepted Manuscript is available for reuse under a CC BY-NC-ND 4.0 licence after the 12 month embargo period provided that all the terms of the licence are adhered to”
Halide vapor phase epitaxy of p-type GaN:Mg films was realized by using solid MgO as the Mg source. The Mg concentration was controlled by supplying HCl gas in a MgO source zone. Mg-related photoluminescence peaks were observed at around 3.3 and 2.9 eV. For a sample with a Mg concentration of 2.8 × 10^19 cm^−3, the Hall-effect measurement showed p-type conduction with a hole concentration and a hole mobility of 1.3 × 10^17 cm^−3 and 9.1 cm^2 V^−1 s^−1, respectively, at room temperature. The Mg acceptor level was 232 ± 15 meV, which is in good agreement with the previous report.
ファイル公開:2021-06-01
IOP publishing
2020-06
eng
journal article
AM
http://hdl.handle.net/2237/00032643
https://nagoya.repo.nii.ac.jp/records/30458
https://doi.org/10.35848/1882-0786/ab9166
1882-0778
Applied Physics Express
13
6
061007
https://nagoya.repo.nii.ac.jp/record/30458/files/Mg-doping_Ohnishiv14_revision20200408-3.pdf
application/pdf
466.8 kB
2021-06-01