2024-03-29T05:17:04Z
https://nagoya.repo.nii.ac.jp/oai
oai:nagoya.repo.nii.ac.jp:02002072
2023-01-16T05:08:31Z
320:321:322
Improved Performance of Titanium Oxide/Silicon Oxide Electron‐Selective Contacts by Implementation of Magnesium Interlayers
Nakagawa, Yuta
Gotoh, Kazuhiro
Inoue, Tetsuya
Kurokawa, Yasuyoshi
Usami, Noritaka
open access
"This is the peer reviewed version of the following article: [Nakagawa, Y., Gotoh, K., Inoue, T., Kurokawa, Y. and Usami, N. (2021), Improved Performance of Titanium Oxide/Silicon Oxide Electron-Selective Contacts by Implementation of Magnesium Interlayers. Phys. Status Solidi A, 218: 2100296. https://doi.org/10.1002/pssa.202100296], which has been published in final form at [https://doi.org/10.1002/pssa.202100296]. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited."
The impact of the implementation of magnesium interlayer and the layer thickness (tTiOx) of titanium oxide on the electrical properties of TiOx/SiOy/Si heterojunctions is investigated to improve electron transport for use in silicon heterojunction solar cells. The passivation performance is improved with increasing tTiOx. For the samples with Mg interlayer, ohmic contact can be attained for the thicker TiOx layer compared with the sample without Mg interlayer. Schottky contact is mitigated by the TiOx/SiOy stacking layers and Mg interlayer, attributed to the reduction of interfacial energy level by TiOx/SiOy stacking layers and enhanced downward band bending by Mg interlayer. The open-circuit voltage and fill factor of the solar cells are improved by inserting the TiOx/SiOy stack and the Mg interlayer, indicating that the electron selectivity is enhanced. Excellent surface passivation and transport properties can be achieved by controlling TiOx layer thickness and using the Mg interlayer.
Wiley
2022-10-01
2021-10
eng
journal article
AM
http://hdl.handle.net/2237/0002002072
https://nagoya.repo.nii.ac.jp/records/2002072
https://doi.org/10.1002/pssa.202100296
1862-6300
physica status solidi (a)
218
19
2100296
https://nagoya.repo.nii.ac.jp/record/2002072/files/Manuscript_pssa-202100296_revised.pdf
application/pdf
1.1 MB
2022-10-01