2026-03-15T17:41:16Z https://nagoya.repo.nii.ac.jp/oai

oai:nagoya.repo.nii.ac.jp:02003985 2023-06-12T01:40:21Z 673:674:675

Local stress control to suppress dislocation generation for pseudomorphically grown AlGaN UV-C laser diodes Kushimoto, Maki Zhang, Ziyi Yoshikawa, Akira Aoto, Koji Honda, Yoshio Sasaoka, Chiaki Schowalter, Leo J. Amano, Hiroshi open access “The following article has been accepted by [Applied Physics Letters]. After it is published, it will be found at "https://doi.org/10.1063/5.0124512”. Previously reported UV-C laser diodes (LD) structures have been subject to design constraints owing to dark line defects at the edge of the mesa stripe after device fabrication. To address this issue, a detailed analysis revealed that the dark line defects were dislocations generated by local residual shear stresses associated with mesa formation on highly strained epitaxial layers. A technique for controlling the local concentration of shear stress, using a sloped mesa geometry, was proposed based on the insights gained by modeling the stress distribution at the edge of the mesa stripe. Experimental results showed that this technique succeeded in completely suppressing the emergence of dark-line defects. This technique will be useful in improving the performance of pseudomorphic AlGaN/AlN-based optoelectronic device including UV-C LDs. AIP Publishing 2022-11 eng journal article AM http://hdl.handle.net/2237/0002003985 https://nagoya.repo.nii.ac.jp/records/2003985 https://doi.org/10.1063/5.0124512 0003-6951 Applied Physics Letters 121 22 222101 https://nagoya.repo.nii.ac.jp/record/2003985/files/manuscript_kushi.pdf application/pdf 4.2 MB 2022-11-24