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Surface production of CF, CF_2 , and C_2 radicals in high-density CF_4/H_2 plasmas
Sasaki, K.
13940
Furukawa, H.
13941
Kadota, K.
13942
Suzuki, C.
13943
Surface production of CF, CF_2 , and C_2 radicals in high-density CF_4/H_2 plasmas was examined using laser-induced fluorescence spectroscopy. No significant amount of surface production was observed in pure CF_4 plasmas. The addition of H_2 into CF_4 plasmas enhanced the surface production of CF_x and C_2 from fluorocarbon film deposited on the chamber wall. The characteristics of the surface production in cw discharges are reported, in comparison with surface production in pulsed discharges. In addition, it has been found that the surface production rates are determined not by the partial pressure but by the flow rate of H_2 , suggesting the significant consumption of feedstock H_2 in discharges. The surface production of CF_x and C_2 indicates that these radicals are not the precursors for the deposition of fluorocarbon film in the CF_4/H_2 plasma. The deposition mechanism of fluorocarbon film in the CF_4/H_2 plasma is discussed, taking into account the surface production of CF_x and C_2.
journal article
American Institute of Physics
2000-11-15
application/pdf
Journal of Applied Physics
10
88
5585
5591
http://hdl.handle.net/2237/7036
0021-8979
https://nagoya.repo.nii.ac.jp/record/5431/files/JApplPhys_88_5585.pdf
eng
https://doi.org/10.1063/1.1319974
Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.