2024-03-29T11:07:19Z
https://nagoya.repo.nii.ac.jp/oai
oai:nagoya.repo.nii.ac.jp:00005447
2023-01-16T03:50:02Z
336:695:696
Highly polarized electrons from GaAs–GaAsP and InGaAs–AlGaAs strained-layer superlattice photocathodes
Nishitani, T.
14005
Nakanishi, T.
14006
Yamamoto, M.
14007
Okumi, S.
14008
Furuta, F.
14009
Miyamoto, M.
14010
Kuwahara, M.
14011
Yamamoto, N.
14012
Naniwa, K.
14013
Watanabe, O.
14014
Takeda, Y.
14015
Kobayakawa, H.
14016
Takashima, Y.
14017
Horinaka, H.
14018
Matsuyama, T.
14019
Togawa, K.
14020
Saka, T.
14021
Tawada, M.
14022
Omori, T.
14023
Kurihara, Y.
14024
Yoshioka, M.
14025
Kato, K.
14026
Baba, T.
14027
GaAs–GaAsP and InGaAs–AlGaAs strained-layer superlattice photocathodes are presented as emission sources for highly polarized electron beams. The GaAs–GaAsP cathode achieved a maximum polarization of 92(±6)% with a quantum efficiency of 0.5%, while the InGaAs–AlGaAs cathode provides a higher quantum efficiency (0.7%) but a lower polarization [77(±5)%]. Criteria for achieving high polarization using superlattice photocathodes are discussed based on experimental spin-resolved quantum efficiency spectra.
journal article
American Institute of Physics
2005-05-01
application/pdf
Journal of Applied Physics
9
97
094907
094907
http://hdl.handle.net/2237/7051
0021-8979
https://nagoya.repo.nii.ac.jp/record/5447/files/JApplPhys_97_094907.pdf
eng
https://doi.org/10.1063/1.1886888
Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.