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Effect of ions and radicals on formation of silicon nitride gate dielectric films using plasma chemical vapor deposition
Ohta, Hiroyuki
14179
Nagashima, Atsushi
14180
Hori, Masaru
14181
Goto, Toshio
14182
We have clarified effects of ions and radicals on the film property of ultrathin silicon nitride (SiN_x) films of 5 nm in thickness formed on Si substrates at 300 ℃ in electron cyclotron resonance plasma-enhanced chemical vapor deposition (PECVD) employing ammonia and silane (NH_3/SiH_4), and nitrogen and silane (N_2/SiH_4) gases. In situ Fourier transform infrared reflection absorption spectroscopy and in situ x-ray photoelectron spectroscopy confirmed that in N_2/SiH_4 plasma, Si-N bonds in the film were increased by eliminating charged species, and thus, radicals promoted the formation of the SiN_x film of high Si-N bond density. On the other hand, Si-N bonds in the film were decreased by eliminating charged species, and eventually, ions played an important role in forming the film of high Si-N bond density in NH_3/SiH_4 plasma. The excellent hysteresis of 0.04 V was successfully achieved with the NH_3/SiH_4 plasma. Furthermore, the quadrupole mass spectroscopy suggests that {NH_4}^+ charged species make a significant contribution to the formation of ultrathin SiN_x films with high quality. These results provide insights into important species to be controlled in the PECVD for low temperature formation of the SiN_x gate dielectric films in ultralarge scale integrated circuits.
journal article
American Institute of Physics
2001-05-01
application/pdf
Journal of Applied Physics
9
89
5083
5087
http://hdl.handle.net/2237/7099
0021-8979
https://nagoya.repo.nii.ac.jp/record/5494/files/JApplPhys_89_5083.pdf
eng
https://doi.org/10.1063/1.1337939
Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.