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Formation of silicon nitride gate dielectric films at 300 ℃ employing radical chemical vapor deposition
Ohta, Hiroyuki
14188
Nagashima, Atsushi
14189
Ito, Masafumi
14190
Hori, Masaru
14191
Goto, Toshio
14192
Silicon nitride (SiN_x) ultrathin gate dielectric films for ultralarge-scale integrated circuits have been successfully formed by radical chemical vapor deposition (R-CVD) at 300 ℃. In this process, charged species incident on the silicon (Si) substrate during the growth were eliminated with the magnetic field in electron cyclotron resonance plasma-enhanced CVD employing nitrogen and silane (N_2 /SiH_4) gases. By using R-CVD, SiN_x films with very low leakage current and near-ideal dielectric constant (ε=7.2) have been obtained. In situ Fourier transform infrared reflection absorption spectroscopy (FT-IR RAS) has confirmed that the Si–N bonds are increased and the voids in films are reduced by eliminating charged species. A key factor for forming ultrathin SiN_x films of high quality at 300 ℃ is discussed, based on characterization of films synthesized with and without charged species on the substrate using in situ x-ray photoelectron spectroscopy, in situ FT-IR RAS, and in situ atomic force microscopy.
journal article
American Institute of Physics
2000-09
application/pdf
Journal of Vacuum Science & Technology B
5
18
2486
2490
http://hdl.handle.net/2237/7102
1071-1023
https://nagoya.repo.nii.ac.jp/record/5496/files/JVB002486.pdf
eng
https://doi.org/10.1116/1.1289549
Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.