2024-03-29T09:34:37Z
https://nagoya.repo.nii.ac.jp/oai
oai:nagoya.repo.nii.ac.jp:00009464
2023-01-16T03:55:05Z
320:321:322
Spin polarization control through resonant states in an Fe/GaAs Schottky barrier
Honda, S.
26978
Itoh, H.
26979
Inoue, J.
26980
Kurebayashi, H.
26981
Trypiniotis, T.
26982
Barnes, C. H. W.
26983
Hirohata, A.
26984
Bland, J. A. C.
26985
electron spin polarisation
gallium arsenide
III-V semiconductors
iron
Schottky barriers
tunnelling
Spin polarization of the tunnel conductivity has been studied for Fe/GaAs junctions with Schottky barriers.It is shown that band matching of resonant interface states within the Schottky barrier defines the sign of spin polarization of electrons transported through the barrier. The results account very well for experimental results including the tunneling of photoexcited electrons and suggest that the spin polarization (from −100% to 100%) is dependent on the Schottky barrier height. They also suggest that the sign of the spin polarization can be controlled with a bias voltage.
journal article
American Physical Society
2008-12
application/pdf
PHYSICAL REVIEW B
24
78
245316
245316
http://hdl.handle.net/2237/11246
1098-0121
https://nagoya.repo.nii.ac.jp/record/9464/files/245316.pdf
eng
https://doi.org/10.1103/PhysRevB.78.245316
Copyright: American Physical Society, All rights reserved.