2024-03-28T21:55:32Z
https://nagoya.repo.nii.ac.jp/oai
oai:nagoya.repo.nii.ac.jp:00010174
2023-01-16T04:37:47Z
336:695:696
Initial Emittance Measurements for Polarized Electron Gun with NEA-GaAs Type Photocathode
Yamamoto, Naoto
30731
Yamamoto, M.
30732
Sakai, R.
30733
Nakanishi, T.
30734
Okumi, S.
30735
Kuwahara, M.
30736
Tamagaki, K.
30737
Morino, T.
30738
Utsu, A.
30739
Mano, A.
30740
Kuriki, M.
30741
Ujihara, T.
30742
Takeda, Y.
30743
Thermal emittance
NEA surface
GaAs
Semiconductors
Photoinjector
Extremely low emittance electron beams are necesarry for new generation accelerators. The value of the required emittances is as low as 0.1 π.mm.mrad. NEA-type photocathodes have an intrinsic advantage for generating such a low emittance beam. In this paper, emittance measuremets of photelectrons extracted from two different NEA phtocahtodes are described. The measurements were carried out using Nagoya University 200kV polarized electron source. The normalized RMS emittances of bulk-GaAs and GaAs-GaAsP superlattice strained photocathodes are as low as 0.12–0.17 ± 0.02 π.mm.mrad and 0.09 ± 0.01 π.mm.mrad with very low charge density, respectively.
journal article
American Institite of Physics
2007
application/pdf
AIP Conference Proceedings
1
915
1071
1076
http://dx.doi.org/10.1063/1.2750955
http://hdl.handle.net/2237/11992
0094-243X
https://nagoya.repo.nii.ac.jp/record/10174/files/25483994.pdf
eng
https://doi.org/10.1063/1.2750955
Copyright (2007) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.