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Reduction of Mg segregation in a metalorganic vapor phase epitaxial grown GaN layer by a low-temperature AlN interlayer
Tomita, Kazuyoshi
30901
Itoh, Kenji
30902
Ishiguro, Osamu
30903
Kachi, Tetsu
30904
Sawaki, Nobuhiko
30905
The redistribution behavior of Mg in a sequentially regrown GaN epilayer on a p-type doped GaN template was studied. All samples in this study were regrown by metalorganic vapor phase epitaxy on the sapphire substrates. A high density and a slow tail of Mg concentration were observed in a nominally undoped layer due to the surface segregation. We found that the insertion of a low-temperature (LT) AlN interlayer was effective to suppress the Mg redistribution in the GaN regrown layer. Analyzing the temperature dependence of the surface segregation, the activation energy of the Mg segregation was estimated to be 0.63 eV in GaN and 2.47 eV in a LT-AlN layer, respectively.
journal article
American Institite of Physics
2008-07-07
application/pdf
JOURNAL OF APPLIED PHYSICS
104
014906
014906
http://dx.doi.org/10.1063/1.2952051
http://hdl.handle.net/2237/12032
0021-8979
https://nagoya.repo.nii.ac.jp/record/10212/files/JApplPhys_104_014906.pdf
eng
https://doi.org/10.1063/1.2952051
Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.