2026-03-15T11:33:03Z https://nagoya.repo.nii.ac.jp/oai

oai:nagoya.repo.nii.ac.jp:00010789 2023-01-16T04:48:45Z 673:674:675

Reduction of phonon resonant terahertz wave absorption in photoconductive switches using epitaxial layer transfer Kasai, S Katagiri, T Takayanagi, J Kawase, K Ouchi, T epitaxial layers gallium arsenide III-V semiconductors phonons photoconducting switches terahertz wave spectra A broadband terahertz time-domain spectroscopy (TDS) system for frequencies of up to 15 THz, including the phonon resonance frequency range, has been developed using a transferred thin-film photoconductive switch (PCS) detector. The thin-film PCSs, based on low-temperature-grown GaAs, were fabricated using epitaxial layer transfer onto high-resistivity Si substrates. We observed a reduction of phonon resonant absorption, including between 7 and 10 THz, in a forward radiation configuration. Numerically calculated absorption spectra show good agreement with our experimental results. This technique will provide compact, broadband TDS systems. journal article American Institite of Physics 2009-03-18 application/pdf APPLIED PHYSICS LETTERS 11 94 113505 113505 0003-6951 https://nagoya.repo.nii.ac.jp/record/10789/files/ApplPhysLett_94_113505.pdf http://hdl.handle.net/2237/12632 https://nagoya.repo.nii.ac.jp/records/10789 eng https://doi.org/10.1063/1.3103278 Copyright (2009) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior per　mission of the author and the American Institute of Physics.