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Si clusters on reconstructed SiC (0001) revealed by surface extended x-ray absorption fine structure
Gao, Xingyu
38756
Chen, Shi
38757
Liu, Tao
38758
Chen, Wei
38759
Wee, A. T. S.
38760
Nomoto, T.
38761
Yagi, S.
38762
Soda, Kazuo
38763
Yuhara, Junji
38764
The evolution of silicon carbide (0001) surface reconstruction upon annealing has been studied by Si K edge extended x-ray absorption fine structure (EXAFS). Using Si KVV Auger electron yield at different emission angles with different surface sensitivities, EXAFS reveals conclusively that Si–Si bonds exist on the surface for all reconstructions. The existence of Si clusters on the 6 square root of 3 × 6 square root of 3R30° surface was also confirmed by x-ray photoemission spectroscopy. This finding gives us a better understanding of epitaxial graphene formation on SiC.
journal article
American Institute of Physics
2009-10
application/pdf
APPLIED PHYSICS LETTERS
14
95
144102
144102
http://hdl.handle.net/2237/14156
http://dx.doi.org/10.1063/1.3242005
0003-6951
https://nagoya.repo.nii.ac.jp/record/12276/files/APPLIED_PHYSICS_LETTERS_95_14_144102.pdf
eng
https://doi.org/10.1063/1.3242005
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