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In situ growth of superconducting NdFeAs(O,F) thin films by molecular beam epitaxy
Kawaguchi, T.
38947
Uemura, H.
38948
Ohno, T.
38949
Tabuchi, M.
38950
Ujihara, T.
38951
Takenaka, K.
38952
Takeda, Y.
38953
Ikuta, H.
38954
Superconducting NdFeAs(O,F) thin films were grown on GaAs substrates by molecular beam epitaxy. Films grown with a sufficiently long growth time exhibited a clear superconducting transition with an onset temperature up to 48 K and zero resistance temperature up to 42 K without the need of an ex situ annealing process. Electron probe microanalysis and Hall coefficient measurements indicated that the superconducting films are doped with fluorine, and depth-profile analysis by Auger electron spectroscopy revealed the formation of a NdOF layer near the surface, which is probably connected with the fluorine doping.
journal article
American Institute of Physics
2010-07-26
application/pdf
APPLIED PHYSICS LETTERS
4
97
042509
042509
http://hdl.handle.net/2237/14198
http://dx.doi.org/10.1063/1.3464171
0003-6951
https://nagoya.repo.nii.ac.jp/record/12317/files/applied_physics_letters_97_4_042509.pdf
eng
https://doi.org/10.1063/1.3464171
Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.