2024-03-28T15:50:10Z
https://nagoya.repo.nii.ac.jp/oai
oai:nagoya.repo.nii.ac.jp:00023015
2023-01-16T04:12:24Z
336:695:696
Molecular beam epitaxy growth of monolayer niobium diselenide flakes
Hotta, Takato
68016
Tokuda, Takuto
68017
Zhao, Sihan
68018
Watanabe, Kenji
68019
Taniguchi, Takashi
68020
Shinohara, Hisanori
68021
Kitaura, Ryo
68022
Monolayer niobium diselenide (NbSe2) is prepared through molecular beam epitaxy with hexagonal boron nitride (hBN) as substrates. Atomic force microscopy and the Raman spectroscopy have shown that the monolayer NbSe2 grown on the hBN possesses triangular or truncated triangular shape whose lateral size amounts up to several hundreds of nanometers. We have found that the precisely controlled supply rate and ultraflat surface of hBN plays an important role in the growth of the monolayer NbSe2.
journal article
AIP Publishing
2016-09-26
application/pdf
APPLIED PHYSICS LETTERS
13
109
133101
133101
http://dx.doi.org/10.1063/1.4963178
http://hdl.handle.net/2237/25202
0003-6951
https://nagoya.repo.nii.ac.jp/record/23015/files/1_4963178.pdf
eng
https://doi.org/10.1063/1.4963178
Copyright 2016 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in (APPLIED PHYSICS LETTERS. v.109, n.13, 2016, p.133101) and may be found at (http://dx.doi.org/10.1063/1.4963178).