2024-03-29T05:28:45Z
https://nagoya.repo.nii.ac.jp/oai
oai:nagoya.repo.nii.ac.jp:00023389
2023-01-16T04:13:09Z
320:321:322
Synthesis of Freestanding Graphene on SiC by a Rapid-Cooling Technique
Bao, Jianfeng
69357
Norimatsu, Wataru
69358
Iwata, Hiroshi
69359
Matsuda, Keita
69360
Ito, Takahiro
69361
Kusunoki, Michiko
69362
Graphene has a negative thermal expansion coefficient; that is, when heated, the graphene lattice shrinks. On the other hand, the substrates typically used for graphene growth, such as silicon carbide, have a positive thermal expansion coefficient. Hence, on cooling graphene on SiC, graphene expands but SiC shrinks. This mismatch will physically break the atomic bonds between graphene and SiC. We have demonstrated that a graphenelike buffer layer on SiC can be converted to a quasifreestanding monolayer graphene by a rapid-cooling treatment. The decoupling of graphene from the SiC substrate was actually effective for reducing the electric carrier scattering due to interfacial phonons. In addition, the rapidly cooled graphene obtained in this way was of high-quality, strain-free, thermally stable, and strongly hole doped. This simple, classical, but quite novel technique for obtaining quasifreestanding graphene could open a new path towards a viable graphene-based semiconductor industry.
journal article
American Physical Society
2016-11-08
application/pdf
Physical Review Letters
117
205501
205501
https://doi.org/10.1103/PhysRevLett.117.205501
http://hdl.handle.net/2237/25583
0031-9007
https://nagoya.repo.nii.ac.jp/record/23389/files/PhysRevLett_117_205501.pdf
eng
https://doi.org/10.1103/PhysRevLett.117.205501
© 2016 American Physical Society