2024-03-29T07:49:40Z
https://nagoya.repo.nii.ac.jp/oai
oai:nagoya.repo.nii.ac.jp:00023517
2023-01-16T04:13:18Z
320:321:322
Temperature dependences of current density–voltage and capacitance–frequency characteristics of hydrogenated nanocrystalline cubic SiC/crystalline Si heterojunction diodes
Tabata, Akimori
69816
Silicon carbide
Nanocrystalline
Hot-wire chemical vapor deposition
Heterojunction
Current density–voltage characteristics
Capacitance–frequency characteristics
We investigated the temperature dependences of the current density–voltage (J − V) and capacitance–frequency (C − f) characteristics of hydrogenated nanocrystalline cubic SiC/crystalline Si heterojunction diodes. The J − V characteristics showed that over the measured temperature range (100–400 K) the carrier transport was governed by diffusion and recombination. Recombination became dominant with decreasing temperature and tunneling did not contribute to the carrier transport. The C − f characteristics showed two relaxation processes dominant at low and high temperatures. The relaxation process dominant at low temperatures had different relaxation times depending on the heterojunction diode, which was caused by shallow states with different densities. The relaxation process dominant at high temperatures had almost the same relaxation times among diodes, which was caused by deep states (0.25–0.27 eV) with almost the same densities.
journal article
Elsevier
2016-11-30
application/pdf
application/pdf
Thin Solid Films
619
323
327
http://dx.doi.org/10.1016/j.tsf.2016.10.042
http://hdl.handle.net/2237/25712
0040-6090
https://nagoya.repo.nii.ac.jp/record/23517/files/PDF2016_Figs.pdf
https://nagoya.repo.nii.ac.jp/record/23517/files/PDF2016.pdf
eng
https://doi.org/10.1016/j.tsf.2016.10.042
© 2016. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/