2024-03-29T08:52:06Z
https://nagoya.repo.nii.ac.jp/oai
oai:nagoya.repo.nii.ac.jp:00026139
2023-01-16T04:45:41Z
673:674:675
Spin-valve giant magneto-resistance film with magnetostrictive FeSiB amorphous layer and its application to strain sensors
Hashimoto, Y.
78416
Yamamoto, N.
78417
Kato, T.
78418
Oshima, D.
78419
Iwata, S.
78420
Giant magneto-resistance (GMR) spin-valve films with an FeSiB/CoFeB free layer were fabricated to detect applied strain in a GMR device. The magnetostriction constant of FeSiB was experimentally determined to have 32 ppm, which was one order of magnitude larger than that of CoFeB. In order to detect the strain sensitively and robustly against magnetic field fluctuation, the magnetic field modulation technique was applied to the GMR device. It was confirmed that the output voltage of the GMR device depends on the strain, and the gauge factor K = 46 was obtained by adjusting the applied DC field intensity and direction. We carried out the simulation based on a macro-spin model assuming uniaxial anisotropy, interlayer coupling between the free and pin layers, strain-induced anisotropy, and Zeeman energy, and succeeded in reproducing the experimental results. The simulation predicts that improving the magnetic properties of GMR films, especially reducing interlayer coupling, will be effective for increasing the output, i.e., the gauge factor, of the GMR strain sensors.
ファイル公開:2019-03-21
journal article
AIP Publishing
2018-03-21
application/pdf
Journal of Applied Physics
11
123
113903
0021-8979
https://nagoya.repo.nii.ac.jp/record/26139/files/1_5018467.pdf
eng
https://doi.org/10.1063/1.5018467
Copyright 2016 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in (Journal of Applied Physics. v.123, 2018, p.113903) and may be found at (https://doi.org/10.1063/1.5018467).