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Electrical current switching of the noncollinear antiferromagnet Mn3GaN
Hajiri, T.
94149
Ishino, S.
94150
Matsuura, K.
94151
Asano, H.
94152
We report electrical current switching of noncollinear antiferromagnetic (AFM) Mn3GaN/Pt bilayers at room temperature. The Hall resistance of these bilayers can be manipulated by applying a pulse current of 1.5 × 10^6 A/cm^2, whereas no significant change is observed up to ∼10^8 A/cm^2 in Mn3GaN single films, indicating that the Pt layer plays an important role. In comparison with ferrimagnetic Mn3GaN/Pt bilayers, a lower electrical current switching of noncollinear AFM Mn3GaN is demonstrated, with a critical current density two orders of magnitude smaller. Our results highlight that a combination of a noncollinear AFM antiperovskite nitride and a spin-torque technique is a good platform for AFM spintronics.
Published Online: 01 August 2019. ファイル公開:2020/08/01
journal article
AIP Publishing
2019-07
application/pdf
Applied Physics Letters
5
115
052403
0003-6951
https://nagoya.repo.nii.ac.jp/record/28684/files/1_5109317.pdf
eng
https://doi.org/10.1063/1.5109317
Copyright 2016 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in (Applied Physics Letters. v.115, n.5, 2019, p.052403) and may be found at (http://dx.doi.org/10.1063/1.5109317).