2026-03-15T17:12:58Z https://nagoya.repo.nii.ac.jp/oai

oai:nagoya.repo.nii.ac.jp:00028793 2023-01-16T04:21:50Z 336:695:696

Ionic liquid thin layer-induced memory effects in organic field-effect transistors Eguchi, Keitaro Matsushita, Michio M. Awaga, Kunio We examined the morphologies and structures of pentacene and C60 thin films grown on thin layers of an ionic liquid, N,N-diethyl-N-methyl-N-(2-methoxyethyl)ammonium bis(trifluoromethanesulfonyl)imide (DEME-TFSI), and found that the characteristics of the films depended significantly on the thickness of DEME-TFSI. In addition, we fabricated organic field-effect transistors (OFETs) of pentacene and C60 in which a thin layer of DEME-TFSI was inserted between the organic semiconductor (pentacene or C60) and the gate insulating layer, and measured their performance in situ. We found that 1.5–2 ML (ML: monolayer) DEME-TFSI produced a large hysteresis loop in the transfer characteristics in these OFETs, but 5 ML DEME-TFSI resulted in the formation of normally-on states with far smaller memory effects. The curvatures of the hysteresis loops were caused by the formation of trap states induced by the DEME-TFSI layers. This novel technique provides a simple tool for creating hysteresis behavior and could potentially be applied to transistor memory devices. ファイル公開：2020/09/21 journal article Royal Society of Chemistry 2019-09-21 application/pdf Physical Chemistry Chemical Physics 35 21 18823 18829 1463-9076 https://nagoya.repo.nii.ac.jp/record/28793/files/Awaga_PCCP.docx.pdf http://hdl.handle.net/2237/00030980 https://nagoya.repo.nii.ac.jp/records/28793 eng https://doi.org/10.1039/C9CP01647C