2024-03-28T21:48:49Z
https://nagoya.repo.nii.ac.jp/oai
oai:nagoya.repo.nii.ac.jp:00029142
2023-01-16T04:22:18Z
320:321:322
Morphology and Electronic Structure of Sn-Intercalated TiS2(0001) Layers
Yuhara, Junji
95680
Isobe, Naoki
95681
Nishino, Kazuki
95682
Fujii, Yuya
95683
Chan, Lap Hong
95684
Araidai, Masaaki
95685
Nakatake, Masashi
95686
Band structure
Surface analysis
Layers
Electrical energy
Scanning tunneling microscopy
The surface morphology and electronic structure of layered semiconductor 1-trigonal phase titanium disulfide, i.e., 1T-TiS2(0001), with Sn intercalation, have been studied by scanning tunneling microscopy (STM), low-energy electron diffraction, synchrotron radiation photoemission spectroscopy, and first-principles calculations based on density functional theory (DFT). From the STM images, we show that Sn atoms are intercalated into TiS2 layers. The electronic structure exhibits electron Fermi pockets around M points and characteristic band dispersions around the M and K points after Sn intercalation. The DFT calculations reveal the geometrical site of intercalated Sn atom, which is surrounded by six sulfur atoms with D3d symmetry. The calculated electronic band structures are in good agreement with the experimental band structure.
ファイル公開:2020-09-12
journal article
ACS Publications
2019-09-12
application/pdf
The Journal of Physical Chemistry C
36
123
22293
22298
1932-7447
https://nagoya.repo.nii.ac.jp/record/29142/files/manuscript_Sn_on_TiS2_JPC_C.pdf
eng
https://doi.org/10.1021/acs.jpcc.9b05492
“This document is the Accepted Manuscript version of a Published Work that appeared in final form in [The Journal of Physical Chemistry C], copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see [https://pubs.acs.org/articlesonrequest/AOR-BpXzPrk5ezGzI6hUj85I].”