2024-03-28T13:14:57Z
https://nagoya.repo.nii.ac.jp/oai
oai:nagoya.repo.nii.ac.jp:00029337
2023-01-16T04:22:31Z
336:695:696
Dual-gate field-effect transistors of octathio[8]circulene thin-films with ionic liquid and SiO2 gate dielectrics
Fujimoto, Takuya
96167
Matsushita, Michio M.
96168
Awaga, Kunio
96169
Dual-gate organic thin-film transistors (OTFTs) of octathio[8]circulene (1) with ionic liquid and SiO2 gate dielectrics lead to good transistor performance with a high on/off ratio (∼10^5), a low threshold voltage (∼−5 V), a low subthreshold slope (∼150 mV/decade), and low power operation, thus surpassing the performance of the single-gate OTFTs of 1. This operation is a promising method for improving the carrier concentrations in OTFTs and for realizing high-performance OTFTs.
journal article
AIP Publishing
2010-09
application/pdf
Applied Physics Letters
12
97
123303
0003-6951
https://nagoya.repo.nii.ac.jp/record/29337/files/1_3491807.pdf
eng
https://doi.org/10.1063/1.3491807
Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in (Applied Physics Letters. v.97, n.12, 2010, p.123303) and may be found at (http://dx.doi.org/10.1063/1.3491807).