2024-03-29T07:41:17Z
https://nagoya.repo.nii.ac.jp/oai
oai:nagoya.repo.nii.ac.jp:00031339
2023-01-16T04:24:55Z
673:674:675
Limitation of simple np-n tunnel junction based LEDs grown by metal-organic vapor phase epitaxy
Robin, Y
103475
Bournet, Q
103476
Avit, G
103477
Pristovsek, M
103478
André, Y
103479
Trassoudaine, A
103480
Amano, H
103481
We show evidence that tunnel junctions (TJs) in GaN grown by metal-organic vapor phase epitaxy are dominated by defect level-assisted tunneling. This is in contrast with the common belief that highly doped layers (>10^20 cm^−3) are required to narrow the TJ space charge region and promote the band-to-band tunneling. Our conclusion stems from the study and the review of the major doping limitations of carefully optimized p^++ and n^++ layers. The secondary ions mass spectroscopy profiles of GaN based TJ LEDs show a strong oxygen concentration located close to the p^++/n^++ interface, typical for three dimensional growth. In addition, considering the doping limitation asymmetry and Mg carry-over, our simulations indicate a depletion region of more than 10 nm which is buried in a rough and defective n^++ layer. However, decent electrical characteristics of the studied TJ based LEDs are obtained, with a low penalty voltage of 1.1 V and a specific differential resistance of about 10^–2 Ω.cm^2 at 20 mA. This indicates that a common TJ could be greatly optimized by using a moderate doping (~10^19 cm^−3) while intentionally introducing local defects within the TJ.
ファイル公開:2021-11-01
journal article
IOP publishing
2020-11
application/pdf
Semiconductor Science and Technology
11
35
115005
0268-1242
https://nagoya.repo.nii.ac.jp/record/31339/files/YR-Tunneljunction-manuscript-VF.pdf
eng
https://doi.org/10.1088/1361-6641/abad73
This is the Accepted Manuscript version of an article accepted for publication in [Semiconductor Science and Technology].IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at [10.1088/1361-6641/abad73].
“This Accepted Manuscript is available for reuse under a CC BY-NC-ND licence after the 12 month embargo period provided that all the terms of the licence are adhered to”