2024-03-28T09:17:22Z
https://nagoya.repo.nii.ac.jp/oai
oai:nagoya.repo.nii.ac.jp:02002697
2023-02-07T01:00:12Z
673:674:675
Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN
Itoh, Yuta
Watanabe, Hirotaka
Ando, Yuto
Kano, Emi
Deki, Manato
Nitta, Shugo
Honda, Yoshio
Tanaka, Atsushi
Ikarashi, Nobuyuki
Amano, Hiroshi
We evaluated the beam current dependence of defect formation during Mg ion implantation into GaN at a high temperature of 1100 °C with two beam currents. Photoluminescence spectra suggest that low-beam-current implantation reduced the vacancy concentration and activated Mg to a greater extent. Moreover, scanning transmission electron microscopy analysis showed that low-beam-current implantation reduced the density of Mg segregation defects with inactive Mg and increased the density of intrinsic dislocation loops, suggesting decreases in the densities of Ga and N vacancies. The formation of these defects depended on beam current, which is an important parameter for defect suppression.
journal article
IOP publishing
2022-02
application/pdf
Applied Physics Express
2
15
021003
1882-0778
https://nagoya.repo.nii.ac.jp/record/2002697/files/Yuta_ITOH_article_revised.pdf
eng
https://doi.org/10.35848/1882-0786/ac481b
This is the Accepted Manuscript version of an article accepted for publication in [Applied Physics Express]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at [https://doi.org/10.35848/1882-0786/ac481b]
“This Accepted Manuscript is available for reuse under a CC BY-NC-ND licence after the 12 month embargo period provided that all the terms of the licence are adhered to”