2024-03-28T15:36:11Z
https://nagoya.repo.nii.ac.jp/oai
oai:nagoya.repo.nii.ac.jp:02003985
2023-06-12T01:40:21Z
673:674:675
Local stress control to suppress dislocation generation for pseudomorphically grown AlGaN UV-C laser diodes
Kushimoto, Maki
Zhang, Ziyi
Yoshikawa, Akira
Aoto, Koji
Honda, Yoshio
Sasaoka, Chiaki
Schowalter, Leo J.
Amano, Hiroshi
Previously reported UV-C laser diodes (LD) structures have been subject to design constraints owing to dark line defects at the edge of the mesa stripe after device fabrication. To address this issue, a detailed analysis revealed that the dark line defects were dislocations generated by local residual shear stresses associated with mesa formation on highly strained epitaxial layers. A technique for controlling the local concentration of shear stress, using a sloped mesa geometry, was proposed based on the insights gained by modeling the stress distribution at the edge of the mesa stripe. Experimental results showed that this technique succeeded in completely suppressing the emergence of dark-line defects. This technique will be useful in improving the performance of pseudomorphic AlGaN/AlN-based optoelectronic device including UV-C LDs.
journal article
AIP Publishing
2022-11
application/pdf
Applied Physics Letters
22
121
222101
0003-6951
https://nagoya.repo.nii.ac.jp/record/2003985/files/manuscript_kushi.pdf
eng
https://doi.org/10.1063/5.0124512
“The following article has been accepted by [Applied Physics Letters]. After it is published, it will be found at "https://doi.org/10.1063/5.0124512”.