@article{oai:nagoya.repo.nii.ac.jp:00010163,
 author = {Hiramatsu, Hidenori and Ueda, Kazushige and Ohta, Hiromichi and Hirano, Masahiro and Kikuchi, Maiko and Yanagi, Hiroshi and Kamiya, Toshio and Hosono, Hideo},
 journal = {APPLIED PHYSICS LETTERS},
 month = {Jul},
 note = {The high density hole doping (1.7×10^21cm^{−3}) for a wide gap (Eg=〰2.8 eV) p-type semiconductor was achieved on 40nm thick Mg-doped LaCuOSe epitaxial films. These films exhibited distinct free carrier absorption, and the effective mass and momentum relaxation time were analyzed. Its small hole mobility [〰3.5cm^2/(V s)] compared to the electron mobilities of wide gap n-type semiconductors is attributed to a heavy effective mass of 1.6±0.2m_e. Regardless of the heavy hole doping, a band filling effect was not observed. These results are discussed with a rigid band model and an acceptor band model.},
 pages = {012104--012104},
 title = {Heavy hole doping of epitaxial thin films of a wide gap p-type semiconductor, LaCuOSe, and analysis of the effective mass},
 volume = {91},
 year = {2007}
}