@article{oai:nagoya.repo.nii.ac.jp:00010165,
 author = {Phokharatkul, D. and Ohno, Y. and Nakano, H. and Kishimoto, S. and Mizutani, T.},
 journal = {APPLIED PHYSICS LETTERS},
 month = {Aug},
 note = {High-density horizontally aligned single-walled carbon nanotubes are grown on a quartz substrate using Co nanoparticles deposited by arc-discharge plasma method. The Co nanoparticles with a density as high as 6.0×10^10 cm^{−2} are formed by a single pulse of arc discharge at room temperature. The density of the aligned nanotubes is ~8 µm^{−1} in average. Multichannel nanotube field-effect transistors with a high-k top-gate structure are fabricated with aligned nanotubes. The devices show high-performance, normally on, and n-type conduction property without any doping process. A high on current of 1.3mA and a large transconductance of 0.23 mS for a channel width of 100 µm are obtained. The normally on and n-type property is attributed to fixed positive charges in the HfO_2 gate insulator and at the interfaces.},
 pages = {053112--053112},
 title = {High-density horizontally aligned growth of carbon nanotubes with Co nanoparticles deposited by arc-discharge plasma method},
 volume = {93},
 year = {2008}
}