{"created":"2021-03-01T06:16:58.594925+00:00","id":10165,"links":{},"metadata":{"_buckets":{"deposit":"6b5214dc-225c-4d86-9ddc-470eb9c2cec9"},"_deposit":{"id":"10165","owners":[],"pid":{"revision_id":0,"type":"depid","value":"10165"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00010165","sets":["320:321:322"]},"author_link":["30665","30666","30667","30668","30669"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2008-08-07","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"053112","bibliographicPageStart":"053112","bibliographicVolumeNumber":"93","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"High-density horizontally aligned single-walled carbon nanotubes are grown on a quartz substrate using Co nanoparticles deposited by arc-discharge plasma method. The Co nanoparticles with a density as high as 6.0×10^10 cm^{−2} are formed by a single pulse of arc discharge at room temperature. The density of the aligned nanotubes is ~8 µm^{−1} in average. Multichannel nanotube field-effect transistors with a high-k top-gate structure are fabricated with aligned nanotubes. The devices show high-performance, normally on, and n-type conduction property without any doping process. A high on current of 1.3mA and a large transconductance of 0.23 mS for a channel width of 100 µm are obtained. The normally on and n-type property is attributed to fixed positive charges in the HfO_2 gate insulator and at the interfaces.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"DOI","subitem_identifier_uri":"http://dx.doi.org/10.1063/1.2969290"},{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/11983"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institite of Physics","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/1.2969290","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"PISSN"}]},"item_10_text_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_text_value":"application/pdf"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Phokharatkul, D.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"30665","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohno, Y.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"30666","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nakano, H.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"30667","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kishimoto, S.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"30668","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Mizutani, T.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"30669","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-20"}],"displaytype":"detail","filename":"ApplPhysLett_93_053112.pdf","filesize":[{"value":"704.0 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"ApplPhysLett_93_053112.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/10165/files/ApplPhysLett_93_053112.pdf"},"version_id":"f8438f9c-1b6b-4d46-83af-c607e47f95e3"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"High-density horizontally aligned growth of carbon nanotubes with Co nanoparticles deposited by arc-discharge plasma method","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"High-density horizontally aligned growth of carbon nanotubes with Co nanoparticles deposited by arc-discharge plasma method","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["322"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2009-07-29"},"publish_date":"2009-07-29","publish_status":"0","recid":"10165","relation_version_is_last":true,"title":["High-density horizontally aligned growth of carbon nanotubes with Co nanoparticles deposited by arc-discharge plasma method"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T03:55:49.653807+00:00"}