@article{oai:nagoya.repo.nii.ac.jp:00010167, author = {Yoshida, Tomoko and Muto, Shunsuke and Tanabe, Tetsuo}, issue = {1}, journal = {AIP Conference Proceedings}, month = {}, note = {X-ray excited optical luminescence (XEOL) of a fused silica glass was studied, varying excitation X-ray energy, irradiation time and temperature. At room temperature, an emission band peaked around 3.1 eV was observed, the origin of which has been assigned to the intrinsic B_2β oxygen deficient center. The luminescence yield was drastically decreased for the X-ray energy corresponding to the ionization threshold of the Si K-edge, while its time evolutions followed exponential production-saturation curves, which were almost independent of the excitation X-ray energies. At 50 K, on the other hand, an additional emission band appeared at the lower energy side, resulting in the emission band broadening. The intensity of the additional band was decreased monotonically with the irradiation time only for the resonance excitation from 1s to 3p of Si atoms in SiO_2 (1848 eV). These results indicate that high-density excitations of inner-shell electrons can give rise to production and/or annihilation of specific types of point defects.}, pages = {572--574}, title = {Measurement of Soft X-Ray Excited Optical Luminescence of a Silica Glass}, volume = {882}, year = {2007} }