@article{oai:nagoya.repo.nii.ac.jp:00010170, author = {Sakamoto, Wataru and Iwata, Asaki and Yogo, Toshinobu}, journal = {JOURNAL OF APPLIED PHYSICS}, month = {Nov}, note = {Ferroelectric BiFeO_3–PbTiO_3 thin films with near morphotropic phase boundary composition were synthesized on Pt/TiO_x/SiO_2/Si substrates by chemical solution deposition. Perovskite BiFeO_3–PbTiO_3 single-phase thin films were successfully fabricated at 600 °C by optimizing several processing conditions, such as the PbTiO_3 content. Typical ferroelectric polarization-electric field (P-E) hysteresis loops were observed for (1−x)BiFeO_3–xPbTiO_3 (x=0.2, 0.3, 0.4, 0.5) thin films, which contained some leakage current components at room temperature. In the low temperature region, the BiFeO_3–PbTiO_3 thin films demonstrated improved insulating resistance and exhibited relatively saturated P-E hysteresis loops. Among these films, 0.7BiFeO_3-0.3PbTiO_3 thin films exhibited the largest remanent polarization, and the remanent polarization (P_r) and coercive field (E_c) at −190 °C were approximately 60 µC/cm2 and 230 kV/cm, respectively. Furthermore, Mn doping of the BiFeO_3–PbTiO_3 thin films was effective in changing the dominant leakage current factors and improving the ferroelectric properties of the resultant thin films at room temperature. The P_r and E_c values of 5 mol % Mn-doped 0.7BiFeO_3-0.3PbTiO_3 films at room temperature were approximately 40 µC/cm2 and 100 kV/cm, respectively. Potentially large remanent polarization (~90 µC/cm^2) was also demonstrated by the BF-PT thin films.}, pages = {104106--104106}, title = {Ferroelectric properties of chemically synthesized perovskite BiFeO_3–PbTiO_3 thin films}, volume = {104}, year = {2008} }