{"created":"2021-03-01T06:16:58.913126+00:00","id":10170,"links":{},"metadata":{"_buckets":{"deposit":"2b39156c-89af-4ae3-ac6e-24c20451c4fb"},"_deposit":{"id":"10170","owners":[],"pid":{"revision_id":0,"type":"depid","value":"10170"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00010170"},"item_10_biblio_info_6":{"attribute_name":"\u66f8\u8a8c\u60c5\u5831","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2008-11-19","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"104106","bibliographicPageStart":"104106","bibliographicVolumeNumber":"104","bibliographic_titles":[{"bibliographic_title":"JOURNAL OF APPLIED PHYSICS"}]}]},"item_10_description_4":{"attribute_name":"\u6284\u9332","attribute_value_mlt":[{"subitem_description":"Ferroelectric BiFeO_3\u2013PbTiO_3 thin films with near morphotropic phase boundary composition were \nsynthesized on Pt/TiO_x/SiO_2/Si substrates by chemical solution deposition. Perovskite\n BiFeO_3\u2013PbTiO_3 single-phase thin films were successfully fabricated at 600 \u00b0C by optimizing \nseveral processing conditions, such as the PbTiO_3 content. Typical ferroelectric polarization-electric field (P-E) hysteresis loops were observed for (1\u2212x)BiFeO_3\u2013xPbTiO_3 (x=0.2, 0.3, 0.4, 0.5) thin films, which contained some leakage current components at room temperature. In the low temperature region, the BiFeO_3\u2013PbTiO_3 thin films demonstrated improved insulating resistance and exhibited relatively saturated P-E hysteresis loops. Among these films, 0.7BiFeO_3-0.3PbTiO_3 thin films exhibited the largest remanent polarization, and the remanent polarization (P_r) and coercive field (E_c) at \u2212190 \u00b0C were approximately 60 \u00b5C/cm2 and 230 kV/cm, respectively. Furthermore,\n Mn doping of the BiFeO_3\u2013PbTiO_3 thin films was effective in changing the dominant leakage \ncurrent factors and improving the ferroelectric properties of the resultant thin films at room \ntemperature. The P_r and E_c values of 5 mol % Mn-doped 0.7BiFeO_3-0.3PbTiO_3 films at room \ntemperature were approximately 40 \u00b5C/cm2 and 100 kV/cm, respectively. Potentially large \nremanent polarization (~90 \u00b5C/cm^2) was also demonstrated by the BF-PT thin films.","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"DOI","subitem_identifier_uri":"http://dx.doi.org/10.1063/1.3026527"},{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/11988"}]},"item_10_publisher_32":{"attribute_name":"\u51fa\u7248\u8005","attribute_value_mlt":[{"subitem_publisher":"American Institite of Physics"}]},"item_10_rights_12":{"attribute_name":"\u6a29\u5229","attribute_value_mlt":[{"subitem_rights":"Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics."}]},"item_10_select_15":{"attribute_name":"\u8457\u8005\u7248\u30d5\u30e9\u30b0","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-8979","subitem_source_identifier_type":"ISSN"}]},"item_10_text_14":{"attribute_name":"\u30d5\u30a9\u30fc\u30de\u30c3\u30c8","attribute_value_mlt":[{"subitem_text_value":"application/pdf"}]},"item_creator":{"attribute_name":"\u8457\u8005","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Sakamoto, Wataru"}],"nameIdentifiers":[{"nameIdentifier":"30683","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Iwata, Asaki"}],"nameIdentifiers":[{"nameIdentifier":"30684","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yogo, Toshinobu"}],"nameIdentifiers":[{"nameIdentifier":"30685","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"\u30d5\u30a1\u30a4\u30eb\u60c5\u5831","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-20"}],"displaytype":"detail","filename":"JApplPhys_104_104106.pdf","filesize":[{"value":"484.6 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"JApplPhys_104_104106.pdf","url":"https://nagoya.repo.nii.ac.jp/record/10170/files/JApplPhys_104_104106.pdf"},"version_id":"71b1a08e-4b6a-4597-85f2-ca89d2745f27"}]},"item_language":{"attribute_name":"\u8a00\u8a9e","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"\u8cc7\u6e90\u30bf\u30a4\u30d7","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Ferroelectric properties of chemically synthesized perovskite BiFeO_3\u2013PbTiO_3 thin films","item_titles":{"attribute_name":"\u30bf\u30a4\u30c8\u30eb","attribute_value_mlt":[{"subitem_title":"Ferroelectric properties of chemically synthesized perovskite BiFeO_3\u2013PbTiO_3 thin films"}]},"item_type_id":"10","owner":"1","path":["673/674/675"],"pubdate":{"attribute_name":"\u516c\u958b\u65e5","attribute_value":"2009-07-29"},"publish_date":"2009-07-29","publish_status":"0","recid":"10170","relation_version_is_last":true,"title":["Ferroelectric properties of chemically synthesized perovskite BiFeO_3\u2013PbTiO_3 thin films"],"weko_creator_id":"1","weko_shared_id":null},"updated":"2021-03-01T19:35:08.160504+00:00"}