{"created":"2021-03-01T06:16:58.913126+00:00","id":10170,"links":{},"metadata":{"_buckets":{"deposit":"2b39156c-89af-4ae3-ac6e-24c20451c4fb"},"_deposit":{"id":"10170","owners":[],"pid":{"revision_id":0,"type":"depid","value":"10170"},"status":"published"},"_oai":{"id":"oai:nagoya.repo.nii.ac.jp:00010170","sets":["673:674:675"]},"author_link":["30683","30684","30685"],"item_10_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2008-11-19","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"104106","bibliographicPageStart":"104106","bibliographicVolumeNumber":"104","bibliographic_titles":[{"bibliographic_title":"JOURNAL OF APPLIED PHYSICS","bibliographic_titleLang":"en"}]}]},"item_10_description_4":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Ferroelectric BiFeO_3–PbTiO_3 thin films with near morphotropic phase boundary composition were  synthesized on Pt/TiO_x/SiO_2/Si substrates by chemical solution deposition. Perovskite  BiFeO_3–PbTiO_3 single-phase thin films were successfully fabricated at 600 °C by optimizing  several processing conditions, such as the PbTiO_3 content. Typical ferroelectric polarization-electric field (P-E) hysteresis loops were observed for (1−x)BiFeO_3–xPbTiO_3 (x=0.2,  0.3,  0.4,  0.5) thin films, which contained some leakage current components at room temperature. In the low temperature region, the BiFeO_3–PbTiO_3 thin films demonstrated improved insulating resistance and exhibited relatively saturated P-E hysteresis loops. Among these films, 0.7BiFeO_3-0.3PbTiO_3 thin films exhibited the largest remanent polarization, and the remanent polarization (P_r) and coercive field (E_c) at −190 °C were approximately 60 µC/cm2 and 230 kV/cm, respectively. Furthermore,  Mn doping of the BiFeO_3–PbTiO_3 thin films was effective in changing the dominant leakage  current factors and improving the ferroelectric properties of the resultant thin films at room  temperature. The P_r and E_c values of 5 mol % Mn-doped 0.7BiFeO_3-0.3PbTiO_3 films at room  temperature were approximately 40 µC/cm2 and 100 kV/cm, respectively. Potentially large  remanent polarization (~90 µC/cm^2) was also demonstrated by the BF-PT thin films.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_10_identifier_60":{"attribute_name":"URI","attribute_value_mlt":[{"subitem_identifier_type":"DOI","subitem_identifier_uri":"http://dx.doi.org/10.1063/1.3026527"},{"subitem_identifier_type":"HDL","subitem_identifier_uri":"http://hdl.handle.net/2237/11988"}]},"item_10_publisher_32":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institite of Physics","subitem_publisher_language":"en"}]},"item_10_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1063/1.3026527","subitem_relation_type_select":"DOI"}}]},"item_10_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.","subitem_rights_language":"en"}]},"item_10_select_15":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_10_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-8979","subitem_source_identifier_type":"PISSN"}]},"item_10_text_14":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_text_value":"application/pdf"}]},"item_1615787544753":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Sakamoto, Wataru","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"30683","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Iwata, Asaki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"30684","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yogo, Toshinobu","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"30685","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-02-20"}],"displaytype":"detail","filename":"JApplPhys_104_104106.pdf","filesize":[{"value":"484.6 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"JApplPhys_104_104106.pdf","objectType":"fulltext","url":"https://nagoya.repo.nii.ac.jp/record/10170/files/JApplPhys_104_104106.pdf"},"version_id":"71b1a08e-4b6a-4597-85f2-ca89d2745f27"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Ferroelectric properties of chemically synthesized perovskite BiFeO_3–PbTiO_3 thin films","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Ferroelectric properties of chemically synthesized perovskite BiFeO_3–PbTiO_3 thin films","subitem_title_language":"en"}]},"item_type_id":"10","owner":"1","path":["675"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2009-07-29"},"publish_date":"2009-07-29","publish_status":"0","recid":"10170","relation_version_is_last":true,"title":["Ferroelectric properties of chemically synthesized perovskite BiFeO_3–PbTiO_3 thin films"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-01-16T04:48:43.825795+00:00"}