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  1. B100 理学部/理学研究科
  2. B100a 雑誌掲載論文
  3. 学術雑誌

Initial Emittance Measurements for Polarized Electron Gun with NEA-GaAs Type Photocathode

http://hdl.handle.net/2237/11992
http://hdl.handle.net/2237/11992
51075746-7573-42a0-bc00-6608d9f3a991
名前 / ファイル ライセンス アクション
25483994.pdf 25483994.pdf (482.7 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2009-07-30
タイトル
タイトル Initial Emittance Measurements for Polarized Electron Gun with NEA-GaAs Type Photocathode
言語 en
著者 Yamamoto, Naoto

× Yamamoto, Naoto

WEKO 30731

en Yamamoto, Naoto

Search repository
Yamamoto, M.

× Yamamoto, M.

WEKO 30732

en Yamamoto, M.

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Sakai, R.

× Sakai, R.

WEKO 30733

en Sakai, R.

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Nakanishi, T.

× Nakanishi, T.

WEKO 30734

en Nakanishi, T.

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Okumi, S.

× Okumi, S.

WEKO 30735

en Okumi, S.

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Kuwahara, M.

× Kuwahara, M.

WEKO 30736

en Kuwahara, M.

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Tamagaki, K.

× Tamagaki, K.

WEKO 30737

en Tamagaki, K.

Search repository
Morino, T.

× Morino, T.

WEKO 30738

en Morino, T.

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Utsu, A.

× Utsu, A.

WEKO 30739

en Utsu, A.

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Mano, A.

× Mano, A.

WEKO 30740

en Mano, A.

Search repository
Kuriki, M.

× Kuriki, M.

WEKO 30741

en Kuriki, M.

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Ujihara, T.

× Ujihara, T.

WEKO 30742

en Ujihara, T.

Search repository
Takeda, Y.

× Takeda, Y.

WEKO 30743

en Takeda, Y.

Search repository
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
権利
言語 en
権利情報 Copyright (2007) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
キーワード
主題Scheme Other
主題 Thermal emittance
キーワード
主題Scheme Other
主題 NEA surface
キーワード
主題Scheme Other
主題 GaAs
キーワード
主題Scheme Other
主題 Semiconductors
キーワード
主題Scheme Other
主題 Photoinjector
抄録
内容記述 Extremely low emittance electron beams are necesarry for new generation accelerators. The value of the required emittances is as low as 0.1 π.mm.mrad. NEA-type photocathodes have an intrinsic advantage for generating such a low emittance beam. In this paper, emittance measuremets of photelectrons extracted from two different NEA phtocahtodes are described. The measurements were carried out using Nagoya University 200kV polarized electron source. The normalized RMS emittances of bulk-GaAs and GaAs-GaAsP superlattice strained photocathodes are as low as 0.12–0.17 ± 0.02 π.mm.mrad and 0.09 ± 0.01 π.mm.mrad with very low charge density, respectively.
言語 en
内容記述タイプ Abstract
出版者
言語 en
出版者 American Institite of Physics
言語
言語 eng
資源タイプ
資源タイプresource http://purl.org/coar/resource_type/c_6501
タイプ journal article
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
DOI
関連タイプ isVersionOf
識別子タイプ DOI
関連識別子 https://doi.org/10.1063/1.2750955
ISSN
収録物識別子タイプ PISSN
収録物識別子 0094-243X
書誌情報 en : AIP Conference Proceedings

巻 915, 号 1, p. 1071-1076, 発行日 2007
フォーマット
application/pdf
著者版フラグ
値 publisher
URI
識別子 http://dx.doi.org/10.1063/1.2750955
識別子タイプ DOI
URI
識別子 http://hdl.handle.net/2237/11992
識別子タイプ HDL
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