@article{oai:nagoya.repo.nii.ac.jp:00010174,
 author = {Yamamoto, Naoto and Yamamoto, M. and Sakai, R. and Nakanishi, T. and Okumi, S. and Kuwahara, M. and Tamagaki, K. and Morino, T. and Utsu, A. and Mano, A. and Kuriki, M. and Ujihara, T. and Takeda, Y.},
 issue = {1},
 journal = {AIP Conference Proceedings},
 month = {},
 note = {Extremely low emittance electron beams are necesarry for new generation accelerators.  The value of the required emittances is as low as 0.1 π.mm.mrad. NEA-type photocathodes have an  intrinsic advantage for generating such a low emittance beam. In this paper, emittance measuremets of photelectrons extracted from two different NEA phtocahtodes are described. The measurements were carried out using Nagoya University 200kV polarized electron source. The normalized RMS emittances of bulk-GaAs and GaAs-GaAsP superlattice strained photocathodes are as low as 0.12–0.17 ± 0.02 π.mm.mrad and 0.09 ± 0.01 π.mm.mrad with very low charge density, respectively.},
 pages = {1071--1076},
 title = {Initial Emittance Measurements for Polarized Electron Gun with NEA-GaAs Type Photocathode},
 volume = {915},
 year = {2007}
}