@article{oai:nagoya.repo.nii.ac.jp:00010217,
 author = {Akanuma, Y. and Yamakawa, I. and Sakuma, Y. and Usuki, T. and Nakamura, A.},
 issue = {1},
 journal = {AIP Conference Proceedings},
 month = {},
 note = {Interfacial properties of InAs quantum dots (QDs) grown by a double-cap method in metalorganic chemical vapor deposition have been investigated by cross-sectional scanning tunneling microscopy (XSTM). XSTM images reveal that top and bottom interfaces of the InAs QD are extremely sharp. QDs with a monolayer-stepped height in the range 6–14 ML are observed, which indicates that the double-cap method can produce QDs with a well-defined height.},
 pages = {107--108},
 title = {Sharp Interfacial Structure of InAs/InP Quantum Dots Grown by a Double-Cap Method: A Cross-Sectional Scanning Tunneling Microscopy Study},
 volume = {893},
 year = {2007}
}